TI CSD23382F4T

TI · FETs & Power MOSFETs · MPN CSD23382F4T

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Specifications

Drain to Source Voltage12V
Gate Charge(Qg)1.35nC@4.5V
Current - Continuous Drain(Id)3.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.1V
Pd - Power Dissipation500mW
RDS(on)76mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)235pF

Technical details

12V 3.5A 1.1V 500mW 76mΩ@4.5V 1 P-Channel PicoStar-3 Single FETs, MOSFETs RoHS

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