TI CSD23382F4

TI · FETs & Power MOSFETs · MPN CSD23382F4

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Specifications

Gate Charge(Qg)1.35nC@6V
Drain to Source Voltage12V
Current - Continuous Drain(Id)3.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.1V
Pd - Power Dissipation500mW
RDS(on)76mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)235pF

Technical details

P-Channel 12V 3.5A 500mW Surface Mount PicoStar-3

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