TI CSD23381F4T

TI · FETs & Power MOSFETs · MPN CSD23381F4T

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Specifications

Drain to Source Voltage12V
Gate Charge(Qg)1.14nC@6V
Current - Continuous Drain(Id)2.3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation500mW
RDS(on)175mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)236pF

Technical details

12V 2.3A 1.2V 500mW 175mΩ@4.5V 1 P-Channel PicoStar-3 Single FETs, MOSFETs RoHS

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