TI CSD23381F4

TI · FETs & Power MOSFETs · MPN CSD23381F4

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Specifications

Gate Charge(Qg)1.14nC@4.5V
Drain to Source Voltage12V
Output Capacitance(Coss)98pF
Current - Continuous Drain(Id)2.3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation500mW
Reverse Transfer Capacitance (Crss@Vds)6.9pF
RDS(on)970mΩ@1.8V
Number1 P-Channel
Input Capacitance(Ciss)236pF
TypeP-Channel

Technical details

P-Channel 12V 2.3A 500mW Surface Mount PicoStar-3

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