TI CSD23280F3T

TI · FETs & Power MOSFETs · MPN CSD23280F3T

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Specifications

Configuration-
Gate Charge(Qg)1.23nC@4.5V
Drain to Source Voltage12V
Output Capacitance(Coss)95pF
Current - Continuous Drain(Id)1.8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))650mV
Pd - Power Dissipation500mW
Reverse Transfer Capacitance (Crss@Vds)11.1pF
RDS(on)97mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)234pF

Technical details

P-Channel 12V 1.8A 500mW Surface Mount PicoStar-3

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