TI · FETs & Power MOSFETs · MPN CSD23203WT
No reviews yet — be the first to review TI CSD23203WT.
| Drain to Source Voltage | 8V |
|---|---|
| Gate Charge(Qg) | 4.9nC@4.5V |
| Output Capacitance(Coss) | 508pF |
| Current - Continuous Drain(Id) | 3A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.1V |
| Pd - Power Dissipation | 750mW |
| Reverse Transfer Capacitance (Crss@Vds) | 172pF |
| RDS(on) | 16.2mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 914pF |
| Type | P-Channel |
8V 3A 1.1V 750mW 16.2mΩ@4.5V 1 P-Channel P-Channel DSBGA-6 Single FETs, MOSFETs RoHS