TI CSD23203W

TI · FETs & Power MOSFETs · MPN CSD23203W

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Specifications

Gate Charge(Qg)6.3nC@4.5V
Drain to Source Voltage8V
Output Capacitance(Coss)391pF
Current - Continuous Drain(Id)3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.1V
Pd - Power Dissipation750mW
Reverse Transfer Capacitance (Crss@Vds)133pF
RDS(on)16.2mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)914pF
TypeP-Channel

Technical details

P-Channel 8V 3A 750mW Surface Mount DSBGA-6

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