TI · FETs & Power MOSFETs · MPN CSD23202W10T
No reviews yet — be the first to review TI CSD23202W10T.
| Drain to Source Voltage | 12V |
|---|---|
| Gate Charge(Qg) | 3.8nC@4.5V |
| Current - Continuous Drain(Id) | 2.2A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 900mV |
| Pd - Power Dissipation | 1W |
| RDS(on) | 53mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 512pF |
12V 2.2A 900mV 1W 53mΩ@4.5V 1 P-Channel DSBGA-4 Single FETs, MOSFETs RoHS