TI · FETs & Power MOSFETs · MPN CSD22206WT
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| Drain to Source Voltage | 8V |
|---|---|
| Gate Charge(Qg) | 14.6nC@4.5V |
| Current - Continuous Drain(Id) | 5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.05V |
| Pd - Power Dissipation | 1.7W |
| RDS(on) | 5.7mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 2.275nF |
8V 5A 1.05V 1.7W 5.7mΩ@4.5V 1 P-Channel DSBGA-9 Single FETs, MOSFETs RoHS