TI CSD19538Q3A

TI · FETs & Power MOSFETs · MPN CSD19538Q3A

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Specifications

Gate Charge(Qg)4.3nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)69pF
Current - Continuous Drain(Id)15A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.2V
Pd - Power Dissipation2.8W
Reverse Transfer Capacitance (Crss@Vds)16.4pF
RDS(on)49mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)454pF
TypeN-Channel

Technical details

N-Channel 100V 15A 2.8W Surface Mount VSONP-8(3.3x3.3)

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