TI · FETs & Power MOSFETs · MPN CSD19538Q2T
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| Gate Charge(Qg) | 5.6nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 13.1A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.8V |
| Pd - Power Dissipation | 2.5W;20.2W |
| RDS(on) | 59mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 454pF |
N-Channel 100V 13.1A 2.5W 20.2W Surface Mount WSON-6(2x2)