TI · FETs & Power MOSFETs · MPN CSD19537Q3T
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| Gate Charge(Qg) | 21nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 326pF |
| Current - Continuous Drain(Id) | 53A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.6V |
| Pd - Power Dissipation | 83W |
| Reverse Transfer Capacitance (Crss@Vds) | 17.3pF |
| RDS(on) | 12.1mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.68nF |
| Type | N-Channel |
N-Channel 100V 53A 83W Surface Mount VSONP-8(3.3x3.3)