TI · FETs & Power MOSFETs · MPN CSD19537Q3
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| Gate Charge(Qg) | 16nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 326pF |
| Current - Continuous Drain(Id) | 50A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 83W |
| RDS(on) | 12.1mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 17.3pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.68nF |
| Type | N-Channel |
100V 50A 3V 83W 12.1mΩ@10V 1 N-channel N-Channel VSON-8-EP(3.3x3.3) Single FETs, MOSFETs RoHS