TI · FETs & Power MOSFETs · MPN CSD19536KTT
No reviews yet — be the first to review TI CSD19536KTT.
| Gate Charge(Qg) | 153nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 2.37nF |
| Current - Continuous Drain(Id) | 200A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.2V |
| Pd - Power Dissipation | 375W |
| Reverse Transfer Capacitance (Crss@Vds) | 61pF |
| RDS(on) | 2.2mΩ@6V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 12nF |
| Type | N-Channel |
N-Channel 100V 200A 375W Surface Mount TO-263-3