TI CSD19534Q5AT

TI · FETs & Power MOSFETs · MPN CSD19534Q5AT

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Specifications

Drain to Source Voltage100V
Gate Charge(Qg)22nC@10V
Current - Continuous Drain(Id)44A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.4V
Pd - Power Dissipation3.2W;63W
RDS(on)15.1mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.68nF

Technical details

N-Channel 100V 44A 3.2W 63W Surface Mount VSONP-8(5x6)

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