TI CSD19534Q5A

TI · FETs & Power MOSFETs · MPN CSD19534Q5A

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Specifications

Gate Charge(Qg)22nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)330pF
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.4V
Pd - Power Dissipation63W
Reverse Transfer Capacitance (Crss@Vds)5.7pF
RDS(on)17.6mΩ@6V
Number1 N-channel
Input Capacitance(Ciss)1.68nF
TypeN-Channel

Technical details

N-Channel 100V 50A 63W Surface Mount SON-8(5x6)

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