TI · FETs & Power MOSFETs · MPN CSD19533Q5AT
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| Gate Charge(Qg) | 35nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 514pF |
| Current - Continuous Drain(Id) | 100A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.4V |
| Pd - Power Dissipation | 96W |
| Reverse Transfer Capacitance (Crss@Vds) | 12.5pF |
| RDS(on) | 11.1mΩ@6V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.67nF |
| Type | N-Channel |
100V 100A 3.4V 96W 11.1mΩ@6V 1 N-channel N-Channel VSONP-8(5x6) Single FETs, MOSFETs RoHS