TI CSD19533Q5A

TI · FETs & Power MOSFETs · MPN CSD19533Q5A

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Specifications

Gate Charge(Qg)27nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)514pF
Current - Continuous Drain(Id)13A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.4V
Pd - Power Dissipation96W
Reverse Transfer Capacitance (Crss@Vds)9.6pF
RDS(on)9.4mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.67nF
TypeN-Channel

Technical details

N-Channel 100V 13A 96W Surface Mount SON-8(5x6)

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