TI · FETs & Power MOSFETs · MPN CSD19533KCS
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| Gate Charge(Qg) | 35nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 100A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.4V |
| Pd - Power Dissipation | 188W |
| RDS(on) | 10.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.67nF |
N-Channel 100V 100A 188W Through Hole TO-220