TI · FETs & Power MOSFETs · MPN CSD19532Q5B
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 48nC@10V |
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 706pF |
| Current - Continuous Drain(Id) | 100A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.6V |
| Pd - Power Dissipation | 195W |
| Reverse Transfer Capacitance (Crss@Vds) | 18pF |
| RDS(on) | 4.6mΩ@6V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.81nF |
N-Channel 100V 17A 195W Surface Mount SON-8(5x6)