TI · FETs & Power MOSFETs · MPN CSD19531Q5AT
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| Drain to Source Voltage | 100V |
|---|---|
| Gate Charge(Qg) | 48nC@10V |
| Output Capacitance(Coss) | 728pF |
| Current - Continuous Drain(Id) | 110A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.3V |
| Pd - Power Dissipation | 125W |
| Reverse Transfer Capacitance (Crss@Vds) | 16.9pF |
| RDS(on) | 7.8mΩ@6V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.87nF |
| Type | N-Channel |
N-Channel 100V 110A 125W Surface Mount VSONP-8(5x6)