TI CSD19506KTT

TI · FETs & Power MOSFETs · MPN CSD19506KTT

No reviews yet — be the first to review TI CSD19506KTT.

Specifications

Drain to Source Voltage80V
Gate Charge(Qg)120nC@10V
Output Capacitance(Coss)2.94nF
Current - Continuous Drain(Id)296A
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation375W
Reverse Transfer Capacitance (Crss@Vds)55pF
RDS(on)2mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)12.2nF
TypeN-Channel

Technical details

80V 296A 2.5V 375W 2mΩ@10V 1 N-channel N-Channel TO-263-2 Single FETs, MOSFETs RoHS

Related FETs & Power MOSFETs