TI · FETs & Power MOSFETs · MPN CSD19506KCS
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| Drain to Source Voltage | 80V |
|---|---|
| Gate Charge(Qg) | 156nC@10V |
| Current - Continuous Drain(Id) | 100A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.2V |
| Pd - Power Dissipation | 375W |
| RDS(on) | 2.3mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 12.2nF |
80V 100A 3.2V 375W 2.3mΩ@10V 1 N-channel TO-220AB-3 Single FETs, MOSFETs RoHS