TI CSD19505KTT

TI · FETs & Power MOSFETs · MPN CSD19505KTT

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Specifications

Gate Charge(Qg)76nC@10V
Drain to Source Voltage80V
Output Capacitance(Coss)2.08nF
Current - Continuous Drain(Id)212A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3.2V
Pd - Power Dissipation300W
Reverse Transfer Capacitance (Crss@Vds)34pF
RDS(on)3.8mΩ@6V
Number1 N-channel
Input Capacitance(Ciss)7.92nF
TypeN-Channel

Technical details

N-Channel 80V 212A 300W Surface Mount TO-263-3

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