TI CSD19505KCS

TI · FETs & Power MOSFETs · MPN CSD19505KCS

No reviews yet — be the first to review TI CSD19505KCS.

Specifications

Gate Charge(Qg)76nC@10V
Drain to Source Voltage80V
Output Capacitance(Coss)2.08nF
Current - Continuous Drain(Id)208A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.6V
Pd - Power Dissipation300W
Reverse Transfer Capacitance (Crss@Vds)34pF
RDS(on)2.6mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)7.82nF
TypeN-Channel

Technical details

N-Channel 80V 208A 300W Through Hole TO-220

Related FETs & Power MOSFETs