TI · FETs & Power MOSFETs · MPN CSD19503KCS
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| Drain to Source Voltage | 80V |
|---|---|
| Gate Charge(Qg) | 36nC@10V |
| Current - Continuous Drain(Id) | 100A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.4V |
| Pd - Power Dissipation | 188W |
| RDS(on) | 9.2mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.73nF |
80V 100A 3.4V 188W 9.2mΩ@10V 1 N-channel TO-220 Single FETs, MOSFETs RoHS