TI CSD19503KCS

TI · FETs & Power MOSFETs · MPN CSD19503KCS

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Specifications

Drain to Source Voltage80V
Gate Charge(Qg)36nC@10V
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3.4V
Pd - Power Dissipation188W
RDS(on)9.2mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.73nF

Technical details

80V 100A 3.4V 188W 9.2mΩ@10V 1 N-channel TO-220 Single FETs, MOSFETs RoHS

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