TI CSD19502Q5B

TI · FETs & Power MOSFETs · MPN CSD19502Q5B

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Specifications

Drain to Source Voltage80V
Gate Charge(Qg)48nC@10V
Output Capacitance(Coss)1.202nF
Current - Continuous Drain(Id)157A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.7V
Pd - Power Dissipation195W
Reverse Transfer Capacitance (Crss@Vds)22pF
RDS(on)3.4mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.87nF
TypeN-Channel

Technical details

80V 157A 2.7V 195W 3.4mΩ@10V 1 N-channel N-Channel VSON-CLIP-8(6x5) Single FETs, MOSFETs RoHS

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