TI CSD18563Q5A

TI · FETs & Power MOSFETs · MPN CSD18563Q5A

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Specifications

Gate Charge(Qg)15nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)364pF
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation116W
Reverse Transfer Capacitance (Crss@Vds)5.1pF
RDS(on)5.7mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.5nF
TypeN-Channel

Technical details

N-Channel 60V 100A 116W Surface Mount SON-8(5x6)

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