TI CSD18543Q3AT

TI · FETs & Power MOSFETs · MPN CSD18543Q3AT

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Specifications

Gate Charge(Qg)14.5nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)218pF
Current - Continuous Drain(Id)60A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.7V
Pd - Power Dissipation66W
Reverse Transfer Capacitance (Crss@Vds)6.2pF
RDS(on)15.6mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)1.15nF
TypeN-Channel

Technical details

N-Channel 60V 60A 66W Surface Mount VSONP-8(3.3x3.3)

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