TI · FETs & Power MOSFETs · MPN CSD18543Q3AT
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| Gate Charge(Qg) | 14.5nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 218pF |
| Current - Continuous Drain(Id) | 60A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.7V |
| Pd - Power Dissipation | 66W |
| Reverse Transfer Capacitance (Crss@Vds) | 6.2pF |
| RDS(on) | 15.6mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.15nF |
| Type | N-Channel |
N-Channel 60V 60A 66W Surface Mount VSONP-8(3.3x3.3)