TI · FETs & Power MOSFETs · MPN CSD18543Q3A
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| Gate Charge(Qg) | 11.1nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 168pF |
| Current - Continuous Drain(Id) | 60A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 66W |
| Reverse Transfer Capacitance (Crss@Vds) | 4.8pF |
| RDS(on) | 8.1mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 885pF |
| Type | N-Channel |
60V 60A 2V 66W 8.1mΩ@10V 1 N-channel N-Channel VSONP-8(3.3x3.3) Single FETs, MOSFETs RoHS