TI CSD18542KTT

TI · FETs & Power MOSFETs · MPN CSD18542KTT

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)57nC@10V
Output Capacitance(Coss)740pF
Current - Continuous Drain(Id)200A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation250W
Reverse Transfer Capacitance (Crss@Vds)14pF
RDS(on)5.1mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)5.07nF
TypeN-Channel

Technical details

N-Channel 60V 200A 250W Surface Mount TO-263-3

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