TI CSD18542KCS

TI · FETs & Power MOSFETs · MPN CSD18542KCS

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)57nC@10V
Current - Continuous Drain(Id)200A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation200W
RDS(on)44mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.07nF

Technical details

N-Channel 60V 200A 200W Through Hole TO-220AB-3

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