TI CSD18537NQ5AT

TI · FETs & Power MOSFETs · MPN CSD18537NQ5AT

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Specifications

Gate Charge(Qg)18nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)177pF
Current - Continuous Drain(Id)54A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation75W
Reverse Transfer Capacitance (Crss@Vds)5.2pF
RDS(on)13mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.48nF
TypeN-Channel

Technical details

N-Channel 60V 54A 75W Surface Mount VSONP-8(5x6)

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