TI CSD18537NQ5A

TI · FETs & Power MOSFETs · MPN CSD18537NQ5A

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Specifications

Gate Charge(Qg)14nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)177pF
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation3.2W
Reverse Transfer Capacitance (Crss@Vds)5.2pF
RDS(on)10mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.48nF
TypeN-Channel

Technical details

N-Channel 60V 50A 3.2W Surface Mount SON-8(5x6)

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