TI · FETs & Power MOSFETs · MPN CSD18536KTTT
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 108nC@10V |
| Output Capacitance(Coss) | 1.41nF |
| Current - Continuous Drain(Id) | 349A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Pd - Power Dissipation | 375W |
| Reverse Transfer Capacitance (Crss@Vds) | 1.84nF |
| RDS(on) | 2.2mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 11.43nF |
| Type | N-Channel |
60V 349A 2.2V 375W 2.2mΩ@4.5V 1 N-channel N-Channel TO-263-3 Single FETs, MOSFETs RoHS