TI CSD18536KCS

TI · FETs & Power MOSFETs · MPN CSD18536KCS

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)140nC@10V
Output Capacitance(Coss)1.84nF
Current - Continuous Drain(Id)349A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation375W
Reverse Transfer Capacitance (Crss@Vds)51pF
RDS(on)2.2mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)11.43nF
TypeN-Channel

Technical details

N-Channel 60V 349A 375W Through Hole TO-220

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