TI · FETs & Power MOSFETs · MPN CSD18535KTTT
No reviews yet — be the first to review TI CSD18535KTTT.
| Gate Charge(Qg) | 81nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 1.15nF |
| Current - Continuous Drain(Id) | 200A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.4V |
| Pd - Power Dissipation | 300W |
| Reverse Transfer Capacitance (Crss@Vds) | 31pF |
| RDS(on) | 2mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 6.62nF |
| Type | N-Channel |
N-Channel 60V 200A 300W Surface Mount TO-263-3