TI CSD18535KTT

TI · FETs & Power MOSFETs · MPN CSD18535KTT

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Specifications

Gate Charge(Qg)63nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)1.15nF
Current - Continuous Drain(Id)279A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1.9V
Pd - Power Dissipation300W
Reverse Transfer Capacitance (Crss@Vds)1.6pF
RDS(on)1.6mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)6.62nF
TypeN-Channel

Technical details

N-Channel 60V 279A 300W Surface Mount TO-263-3

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