TI · FETs & Power MOSFETs · MPN CSD18535KCS
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| Gate Charge(Qg) | 81nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 200A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.4V |
| Pd - Power Dissipation | 300W |
| RDS(on) | 2mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 6.62nF |
N-Channel 60V 200A 300W Through Hole TO-220AB-3