TI CSD18534KCS

TI · FETs & Power MOSFETs · MPN CSD18534KCS

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Specifications

Gate Charge(Qg)24nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)205pF
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1.9V
Pd - Power Dissipation107W
Reverse Transfer Capacitance (Crss@Vds)6.5pF
RDS(on)7.6mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.88nF
TypeN-Channel

Technical details

N-Channel 60V 100A 107W Through Hole TO-220

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