TI · FETs & Power MOSFETs · MPN CSD18533Q5AT
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 36nC@10V |
| Current - Continuous Drain(Id) | 17A;100A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.3V |
| Pd - Power Dissipation | 3.2W;116W |
| RDS(on) | 5.9mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.75nF |
60V 2.3V 5.9mΩ@10V 1 N-channel VSONP-8(5x6) Single FETs, MOSFETs RoHS