TI CSD18533KCS

TI · FETs & Power MOSFETs · MPN CSD18533KCS

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Specifications

Gate Charge(Qg)34nC@10V
Drain to Source Voltage60V
Current - Continuous Drain(Id)72A;100A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.3V
Pd - Power Dissipation192W
RDS(on)6.3mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.025nF

Technical details

N-Channel 60V 72A 100A 192W Through Hole TO-220

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