TI · FETs & Power MOSFETs · MPN CSD18533KCS
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| Gate Charge(Qg) | 34nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 72A;100A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.3V |
| Pd - Power Dissipation | 192W |
| RDS(on) | 6.3mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.025nF |
N-Channel 60V 72A 100A 192W Through Hole TO-220