TI · FETs & Power MOSFETs · MPN CSD18532Q5B
No reviews yet — be the first to review TI CSD18532Q5B.
| Gate Charge(Qg) | 44nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 611pF |
| Current - Continuous Drain(Id) | 100A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.8V |
| Pd - Power Dissipation | 156W |
| Reverse Transfer Capacitance (Crss@Vds) | 17pF |
| RDS(on) | 2.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.07nF |
| Type | N-Channel |
60V 100A 1.8V 156W 2.5mΩ@10V 1 N-channel N-Channel SON-8(5x6) Single FETs, MOSFETs RoHS