TI CSD18532NQ5BT

TI · FETs & Power MOSFETs · MPN CSD18532NQ5BT

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Specifications

Gate Charge(Qg)49nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)644pF
Current - Continuous Drain(Id)151A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.4V
Pd - Power Dissipation156W
Reverse Transfer Capacitance (Crss@Vds)21pF
RDS(on)4.4mΩ@6V
Number1 N-channel
Input Capacitance(Ciss)5.34nF
TypeN-Channel

Technical details

60V 151A 3.4V 156W 4.4mΩ@6V 1 N-channel N-Channel SON-8(5x6) Single FETs, MOSFETs RoHS

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