TI CSD18532NQ5B

TI · FETs & Power MOSFETs · MPN CSD18532NQ5B

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)49nC@10V
Output Capacitance(Coss)495pF
Current - Continuous Drain(Id)151A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.8V
Pd - Power Dissipation156W
Reverse Transfer Capacitance (Crss@Vds)16pF
RDS(on)2.7mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.1nF
TypeN-Channel

Technical details

60V 151A 2.8V 156W 2.7mΩ@10V 1 N-channel N-Channel SON-8(5x6) Single FETs, MOSFETs RoHS

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