TI CSD18532KCS

TI · FETs & Power MOSFETs · MPN CSD18532KCS

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Specifications

Gate Charge(Qg)44nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)564pF
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.8V
Pd - Power Dissipation250W
Reverse Transfer Capacitance (Crss@Vds)14pF
RDS(on)3.3mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.68nF
TypeN-Channel

Technical details

N-Channel 60V 100A 250W Through Hole TO-220

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