TI CSD18531Q5AT

TI · FETs & Power MOSFETs · MPN CSD18531Q5AT

No reviews yet — be the first to review TI CSD18531Q5AT.

Specifications

Gate Charge(Qg)36nC@10V
Drain to Source Voltage60V
Current - Continuous Drain(Id)134A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1.8V
Pd - Power Dissipation3.8W
Reverse Transfer Capacitance (Crss@Vds)14pF
RDS(on)3.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.84nF
TypeN-Channel

Technical details

N-Channel 60V 134A 3.8W Surface Mount VSONP-8(5x6)

Related FETs & Power MOSFETs