TI CSD18514Q5AT

TI · FETs & Power MOSFETs · MPN CSD18514Q5AT

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Specifications

Gate Charge(Qg)29nC@10V
Drain to Source Voltage40V
Current - Continuous Drain(Id)80A
Output Capacitance(Coss)267pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.8V
Pd - Power Dissipation74W
Reverse Transfer Capacitance (Crss@Vds)138pF
RDS(on)4.1mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.68nF
TypeN-Channel

Technical details

40V 80A 1.8V 74W 4.1mΩ@10V 1 N-channel N-Channel VSON-8(5x6) Single FETs, MOSFETs RoHS

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