TI CSD18513Q5AT

TI · FETs & Power MOSFETs · MPN CSD18513Q5AT

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Specifications

Gate Charge(Qg)45nC@10V
Drain to Source Voltage40V
Current - Continuous Drain(Id)124A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.4V
Pd - Power Dissipation96W
Reverse Transfer Capacitance (Crss@Vds)231pF
RDS(on)3.4mΩ@10V
Input Capacitance(Ciss)4.28nF
TypeN-Channel

Technical details

40V 124A 2.4V 96W 3.4mΩ@10V N-Channel VSONP-8(4.9x5.8) Single FETs, MOSFETs RoHS

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