TI · FETs & Power MOSFETs · MPN CSD18512Q5BT
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| Gate Charge(Qg) | 98nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Output Capacitance(Coss) | 699pF |
| Current - Continuous Drain(Id) | 211A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Pd - Power Dissipation | 139W |
| Reverse Transfer Capacitance (Crss@Vds) | 256pF |
| RDS(on) | 2.3mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 7.12nF |
| Type | N-Channel |
40V 211A 2.2V 139W 2.3mΩ@4.5V 1 N-channel N-Channel VSON-8(5x6) Single FETs, MOSFETs RoHS